Vapor growth and epitaxy 1996STRINGFELLOW, G. B.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 513-857, issn 0022-0248Conference Proceedings

Effect of Ce doping on the growth of ZnO thin films : Vapor growth and epitaxy 1996MORINAGA, Y; SAKURAGI, K; FUJIMURA, N et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 691-695, issn 0022-0248Conference Paper

Effect of growth parameters on step structure and ordering in GaInP : Vapor growth and epitaxy 1996CHUN, Y. S; LEE, S. H; HO, I. H et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 585-592, issn 0022-0248Conference Paper

Growth and characterization of bismuth and antimony thin films : Vapor growth and epitaxy 1996MARTINEZ, A; COLLAZO, R; BERRIOS, A. R et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 845-850, issn 0022-0248Conference Paper

In situ detection of misfit dislocations by light scattering : Vapor growth and epitaxy 1996KAVANAGH, K. L; GOLDMAN, R. S; LAVOIE, C et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 550-557, issn 0022-0248Conference Paper

Selective area growth of AlGaAs on GaAs by PSE/MBE : Vapor growth and epitaxy 1996BACCHIN, G; TSUNODA, K; NISHINAGA, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 616-621, issn 0022-0248Conference Paper

Adatom concentration on GaAs(001) during annealing : Vapor growth and epitaxy 1996JOHNSON, M. D; LEUNG, K. T; BIRCH, A et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 572-578, issn 0022-0248Conference Paper

Electrical fluctuations in HgCdTe introduced during quenching after annealing : Vapor growth and epitaxy 1996EBE, H; YAMAMOTO, K.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 746-750, issn 0022-0248Conference Paper

Formation of YMnO₃ films directly on Si substrate : Vapor growth and epitaxy 1996AOKI, N; FUJIMURA, N; YOSHIMURA, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 796-800, issn 0022-0248Conference Paper

Initial growth characteristics of germanium on silicon in LPCVD using germane gas : Vapor growth and epitaxy 1996KOBAYASHI, S; SAKURABA, M; MATSUURA, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 686-690, issn 0022-0248Conference Paper

Origin of surface reflectance spectrum during epitaxy : Vapor growth and epitaxy 1996KOBAYASHI, N; KOBAYASHI, Y; UWAI, K et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 544-549, issn 0022-0248Conference Paper

SiC-bulk growth by physical-vapor transport and its global modelling : Vapor growth and epitaxy 1996HOFMANN, D; ECKSTEIN, R; KÖLBL, M et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 669-674, issn 0022-0248Conference Paper

The growth of mid-infrared lasers and AlAs_xSb_1-x by MOCVD : Vapor growth and epitaxy 1996BIEFELD, R. M; ALLERMAN, A. A; KURTZ, S. R et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 593-598, issn 0022-0248Conference Paper

Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy : Vapor growth and epitaxy 1996WENISCH, H; BEHR, T; KREISSL, J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 751-756, issn 0022-0248Conference Paper

Kinetic limitations on incorporation of Zn in Cd_1-xZn_xTe : Vapor growth and epitaxy 1996REINOSO, J. J; KO, E. I; SIDES, P. J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 713-718, issn 0022-0248Conference Paper

3C-SiC growth by alternate supply of SiH₂Cl₂ and C₂H₂ : Vapor growth and epitaxy 1996YAGI, K; NAGASAWA, H.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 653-657, issn 0022-0248Conference Paper

Computer simulation of surface growth : Vapor growth and epitaxy 1996XIAO, R.-F.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 531-538, issn 0022-0248Conference Paper

High-temperature X-ray measurements of gallates and cuprates : Vapor growth and epitaxy 1996UTKE, I; KLEMENZ, C; SCHEEL, H. J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 813-820, issn 0022-0248Conference Paper

Low supersaturation nucleation and contactless growth of photorefractive ZnTe crystals : Vapor growth and epitaxy 1996GRASZA, K; TRIVEDI, S. B; YU, Z et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 719-725, issn 0022-0248Conference Paper

Partial pressure monitoring in cadmium telluride vapour growth : Vapor growth and epitaxy 1996CARLES, J; MULLINS, J. T; BRINKMAN, A. W et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 740-745, issn 0022-0248Conference Paper

Surface-related optical anisotropy of GaInP, InP, and GaP : Vapor growth and epitaxy 1996LUO, J. S; GEISZ, J. F; OLSON, J. M et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 558-563, issn 0022-0248Conference Paper

Misfit problems in epitaxy of high-T_c superconductors : Vapor growth and epitaxy 1996UTKE, I; KLEMENZ, C; SCHEEL, H. J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 806-812, issn 0022-0248Conference Paper

The reactivity of dimethylcadmium on GaAs(100) and CdTe(100) : Vapor growth and epitaxy 1996YONG, K; REINOSO, J. J; GELLMAN, A. J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 708-712, issn 0022-0248Conference Paper

Comparison of chlorocarbons as an additive during MOVPE for flat burying growth of InP : Vapor growth and epitaxy 1996TAKEUCHI, T; TANAHASHI, T.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 611-615, issn 0022-0248Conference Paper

Optical-pumped lasing of doped ZnSe epilayers grown by MOVPE : Vapor growth and epitaxy 1996YABLONSKII, G. P; GURSKII, A. L; LUCENKO, E. V et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 763-767, issn 0022-0248Conference Paper